发明名称 MULTIPLE SINGLE LAYER MONOLITHIC PASSIVE INTEGRATED CIRCUITS AND METHOD
摘要 <p>Integrated circuits and the method of making same are disclosed which are suitable for use in integrated circuits such as amplifiers, filters and oscillators. Each integrated circuit includes using a main dielectric body that has a thin conductive layer (12) on opposite faces, using conventional etching process to etch out selected spaces or gaps (15, 16) in the layers according to a preselected pattern and cutting through the body to form oblong shaped bodies that form the integrated circuit. These circuits have conductive plates and spaces between plates on both sides with opposite plates providing capacitors connected mechanically and electrically and square shaped sections connected between plates of selected conductive materials which function as resistors and inductors.</p>
申请公布号 WO1998024099(A1) 申请公布日期 1998.06.04
申请号 US1997018413 申请日期 1997.10.15
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