| 发明名称 |
A warm wall reaction chamber and a method for forming a hemi-spherical grain layer using the same |
| 摘要 |
<p>In a warm wall type reaction chamber portion for forming an HSG silicon layer the temperature in the reaction chamber (46,50) is maintained at 200 SIMILAR 500 DEG C, and an adiabatic unit is provided for preventing heat discharge from the reaction chamber. The warm wall reaction chamber can selectively form HSG on the surface of a storage electrode, and reduce the process time for forming the HSG silicon layer. <IMAGE></p> |
| 申请公布号 |
EP0845546(A2) |
申请公布日期 |
1998.06.03 |
| 申请号 |
EP19970307402 |
申请日期 |
1997.09.23 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, SE-JIN;JIN, YOU-CHAN;NAM, SEUNG-HEE;KANG, SEUNG-DONG |
| 分类号 |
H01L27/04;C23C16/24;C23C16/46;H01L21/02;H01L21/20;H01L21/205;H01L21/822;H01L27/108;(IPC1-7):C23C16/46;H01L21/320 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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