Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer

摘要

A method for forming upon a semiconductor substrate a void free titanium nitride Anti-Reflective Coating (ARC) layer upon an aluminum containing conductor layer. There is first formed upon a semiconductor substrate an aluminum containing conductor layer. There is then formed upon the aluminum containing conductor layer a titanium rich titanium nitride layer which has a titanium:nitrogen molar ratio of greater than about 1.1:1. Finally, there is formed upon the titanium rich titanium nitride layer a substantially stoichiometric titanium nitride layer which has a titanium:nitrogen molar ratio of from about 1.0:1 to about 1.1:1. Optionally, a patterned photo resist layer may be formed upon the surface of the substantially stoichiometric titanium nitride layer and the substantially stoichiometric titanium nitride layer, the titanium rich titanium nitride layer and the aluminum containing conductor layer may be sequentially patterned.