| 摘要 |
PROBLEM TO BE SOLVED: To lower the contact resistance by silicifying the contact region of a polycrystalline silicon resistor. SOLUTION: A polycrystalline silicon film 13 in a specific film thickness is grown on a thick oxide film 12 formed on a semiconductor substrate 11 and after implanting and heat-treating impurities, a resistor 13 is formed by patterning it into a specific planar shape. Later, an oxide film 14 is grown on the whole surface of the semiconductor substrate 11 and after removing the oxide film 14 on the contact region of the resistor 13, the resistor 13 is coated with a high melting point metal to perform a specific heat-treatment for the formation of a silicified layer 15 in the contact region so as to make feasible of the reduction of contact resistance, the improvement of controllability of resistance value as well as the precision as the results of miniaturization of a constact hole. |
