发明名称 MANUFACTURE OF FIELD EMISSION TYPE ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method for a field emission type element by which reproducibility and production yield in a lift-off process, which affects the reproducibility and the production yield in the manufacturing process, can be improved. SOLUTION: A stop layer 2 is formed on an insulating substrate 1 by evaporation, a base layer 4 to become a base electrode is formed on the stop layer 2 by evaporation, and a resistor layer 5, an emitter layer 6, a silicon layer 12, and a peeling layer 7 are successively deposited on the base layer 4 by sputtering. Then, a photoresist pattern with an emitter shape is formed on the peeling layer 7 and using the photoresist pattern, the peeling layer 7, silicon layer 12, the emitter layer 6, and the resistor layer 5 are patterned by reactive ion etching to form a recessed part 13. At the time of evaporation process, the recessed part 13 reliably retains an aperture part of the peeling layer, so that an etchant can easily enter at the time of lift-off of the peeling layer 7 and uniform and quick lift off can be carried out.</p>
申请公布号 JPH10149762(A) 申请公布日期 1998.06.02
申请号 JP19960307930 申请日期 1996.11.19
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KONDO YUKIHIRO;KIMURA HIDEYOSHI;MATSUURA JUN
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
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