FABRICATION METHOD OF CONTACT HOLE IN SEMICONDUCTOR,申请号KR19940007532-传众专利搜索

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发明名称	FABRICATION METHOD OF CONTACT HOLE IN SEMICONDUCTOR
摘要
申请公布号	KR0138292(B1)	申请公布日期	1998.06.01
申请号	KR19940007532	申请日期	1994.04.11
申请人	SAMSUNG ELECTRONICS CO.,LTD	发明人	PARK, WON-MO;LEE, SEUNG-KOO
分类号	H01L21/28;(IPC1-7):H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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