发明名称 |
Method for forming zener diode with high time stability and low noise |
摘要 |
Zener diode with high stability in time and low noise for integrated circuits and provided in an epitaxial pocket insulated from the rest of a type N epitaxial layer grown on a substrate of type P semiconductor material. In said pocket are included a type N+ cathode region and a type P anode region enclosing it. The cathode region has a peripheral part surrounding a central part extending in the anode region less deeply than the peripheral part.
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申请公布号 |
US5756387(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19950581493 |
申请日期 |
1995.12.29 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
VILLA, FLAVIO;FERRARI, PAOLO |
分类号 |
H01L21/329;H01L29/866;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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