| 摘要 |
A thin film transistor which can improve such electric characteristics as off current characteristics, and a manufacturing method of a thin film transistor. A thin film transistor (110) has an n- source area (112) and an n- drain area (113) consisting of an n- silicon film (low concentration area) of about 400 ANGSTROM , which is a silicon film made by performing a crystallization treatment such as an SPC method on an amorphous silicon, and the crystallization treatment is carried out after the implantation of impurities to activate the impurities at the same time. A gate electrode (116) is a metal electrode, and is formed after an n- source area (112) and an n- drain area (113) are formed. A gate electrode (116), an n- source area (112) and an n- drain area (113) are not formed self-alignedly./!
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