发明名称 |
Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature |
摘要 |
A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000 DEG C. or higher.
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申请公布号 |
US5757032(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19950510220 |
申请日期 |
1995.08.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LTD. |
发明人 |
NISHIBAYASHI, YOSHIKI;SHIOMI, HIROMU;SHIKATA, SHIN-ICHI |
分类号 |
H01L21/28;H01L21/04;H01L29/43;H01L29/47;H01L29/872;(IPC1-7):H01L31/031;H01L23/48;H01L23/52;H01L27/095 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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