| 摘要 |
A magnetically suppressed Faraday system for use in an ion beam treatment system, such as an ion implanter, includes a Faraday cage defining a chamber having an entrance, and a magnetic suppression assembly positioned at the entrance of the chamber. The downstream end of the Faraday cage is positioned adjacent to a workpiece such as a semiconductor wafer. The magnetic suppression assembly includes a suppression magnet structure for producing suppression magnetic fields of sufficient strength to inhibit escape of electrons from the chamber, a field cancellation magnet structure for producing cancellation magnetic fields for substantially canceling magnetic fields, produced by other magnets in the magnetic suppression assembly, near the downstream end of the chamber, and an angle correction magnet structure for producing angle correction magnetic fields selected such that the ion beam is subjected to zero or nearly zero net angular deflection as it passes through the Faraday system.
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