| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a mask for charged particle ray or X-ray transfer by which pattern defect is free or limited within an allowable range. SOLUTION: A member of a 3-layer structure, i.e., an Si layer 33, an intermediate layer 32 and an Si substrate 31 is prepared. The Si layer 33 is formed therein with an open hole pattern corresponding to a through-hole pattern to be transferred at set positions in a small region of the Si layer, and then the formed open hole pattern is subjected to a defect inspecting operation. When there is a defect, the defect is corrected. The Si substrate 31 is then etched to form a membrane having a plurality of columns, openings defined therebetween, the Si layer 33 and the intermediate layer 32. Further, the intermediate layer 32 exposed at the openings is etched to change the above holes of the pattern to through-holes in the membrane, thus forming numerous small regions and boundary regions. |
