| 摘要 |
PROBLEM TO BE SOLVED: To polish a metal film at a high speed, without causing defects to improve the metal film-insulation film polish selectively and suppress the defects of the insulation film surface by using a polishing agent, composed of a cerium oxide having specified grain size or metal oxide contg. a cilium oxide as a main component, and oxidizer. SOLUTION: A metal film polishing compd. on a semiconductor substrate contains water, polishing agent and oxidizer as the necessary components and uses a cerium oxide having a mean grain size of about 3μm or less, pref. about 0.2-1.5μm or metal oxide contg. a cerium oxide as a main component. This metal oxide contains the cerium oxide about 50wt% or more. Other metal oxide than the cerium oxide is pref. aluminum oxide having a transition alumina crystal system or amorphous. The oxidizer for oxidizing the surface of a metal film difficult to be ground, while polishing to improve the polishing speed is pref. hydrogen peroxide or iron nitrate. |
