| 摘要 |
PROBLEM TO BE SOLVED: To provide a photowaveguide structure capable of manufacturing in simple steps and easy width control of photowaveguide as well as semiconductor photodevice using the structure. SOLUTION: An Al (Ga)As core layer 13 which the film thickness is minimized on the central part in the film thickness direction slowly increasing toward the outside of the film to be maximized on the surface and on the back parts of the film is formed on a GaAs substrate 11, and, by partially oxidizing this core layer 13 in steam, a photo-transmittable peripheral oxidized region 16 and a central non-oxidized region 17 to be a not-transmittable photowaveguide are formed. Besides, by specifying the Al composition to be 0.97 on the central part of the film and to be 1 on the outside part of the film, the oxidization ratio of 1:10 can be secured while, by specifying the photowaveguide structure to make tapered ridge in the optic axial direction, an almost round photowaveguide 16 can be formed on the taper front part so as to improve the photocoupling efficiency with an optical fiber. Finally, by forming a semiconductor element on the common substrate 11 using growing method, etc., the semiconductor photodevice in high coupling efficiency with the optical fiber causing the least carrier leakage can be manufactured. |
