发明名称 LEAD SHAPING UNIT AND MANUFACTURE OF SEMICONDUCTOR DEVICE EMPLOYING IT
摘要 PROBLEM TO BE SOLVED: To suppress defect, e.g. crack, of a package significantly by reducing stress being applied to the package at the time of cutting gate resin. SOLUTION: A gate die 6 for cutting a gate resin 3a comprises a package receiver 7 for mounting a semiconductor device 1 being fitted to the bottom face and the side faces of a package 3, and a gate cut punch 8 for cutting the gate resin 3a. A punch part 8a for cutting the gate resin 3a is formed in the gate cut punch 8 at an angleθ2 equal to or larger than the inclination angle of a gate provided in a mold die. The gate resin 3a can be cut by the gate die 6 while clearing off the chips from the package 3 because of the inclining punch part 8a. Furthermore, since the force acting at the time of cutting because of the package fitted to the side faces of the package 3 can be absorbed by the package receiver 7, the package 3 can be protected surely against cracking.
申请公布号 JPH10135394(A) 申请公布日期 1998.05.22
申请号 JP19960289547 申请日期 1996.10.31
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 ABO HIROAKI
分类号 B29C45/38;B29C45/14;B29C45/17;B29L31/34;H01L21/56;H01L23/50;(IPC1-7):H01L23/50 主分类号 B29C45/38
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