| 摘要 |
PROBLEM TO BE SOLVED: To form side-wall passivation having excellent vertical profile, even when a substrate is maintained at a room temperature by etching a first photosensitive layer with nitrogen only by using a patterned intermediate barrier layers as a mask. SOLUTION: After a layer 22 to be etched and a first photosensitive film layer 23 for flattening bottom are successively formed on a semiconductor substrate 21, an intermediate barrier layer 24 and a second photosensitive film layer 25 for patterning are successively formed on the layer 23 and the layers 24 and 25 are selectively patterned (a). Then the intermediate barrier layer 24 is etched with fluorine plasma by using the patterned second photosensitive film layer 25 as a mask. Then, after the second photosensitive film layer 25 has been removed, a first photosensitive film 23 having superior vertical profile is obtained by etching the first photosensitive film layer 23 with high-density etching device, by only using a nitrogen gas having a superior side-wall passivation forming ability at a room temperature. |
