| 摘要 |
PROBLEM TO BE SOLVED: To prevent the effects, etc., of a resist on a substrate by completely removing the resist by preventing the accumulation of heat in the resist by incorporating a half-ashing process in a resist-removing process. SOLUTION: At the time of implanting ions into a source and a drain, a hardened layer 4 is formed on the upper surface of a resist 1 owing to high-dose ion implantation. At the time of performing oxygen plasma treatment with a barrel-type asher for removing the resist 1, half-ashing is performed. The half-ashing is performed by controlling the ashing time, so that appropriate half ashing can be achieved. Namely, the ashing time is controlled so that the thickness of the resist 1 can become about 50% or slightly thinner than 50% of the initial thickness of the resist 1. Therefore, the accumulation of heat in the resist 1a, left after half-ashing, can be suppressed. When the resist 1a is wet-treated a state such that the resist 1a is not carbonized, the resist 1a can be removed sufficiently. |
