SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent light emitting wavelength from shifting by the disappearance of a surface of a barrier layer which becomes the most upper layer of the light emitting layers when a semiconductor layer such as a clad layer is formed on the light emitting layers having a superlattice structure and by the thinning of barrier layer. SOLUTION: By this method, a semiconductor light emitting element is manufactured by a first semiconductor layer being formed, by light emitting layers 5 with a superlattice structure being formed by laminating a barrier layer made of InY1 Ga1- Y1 N (Y1<=0) and a quantum well layer made of InY2 Ga1- Y2 N (Y2>Y1 and Y2>0) on the first semiconductor layer and by a second semiconductor layer being formed on the light emitting layers 5. A most upper barrier layer which becomes the most upper layer of the light emitting layers 5 are formed to be thicker than other barrier layers. When the second semiconductor layer is formed, the upper surface of the most upper barrier layer is made to disappear and the thickness of the barrier layer is made to be practically the same as those of other barriers.