发明名称 |
Plasma etching method and apparatus |
摘要 |
<p>A plasma etching method and apparatus are provided in which a distance between an ejection opening (20a) in a plasma generator (2) for ejecting an active species gas and a surface of an object to be etched can be changed to thereby shorten the time required for a surface flattening operation and reduce the cost of equipment as well. To this end, the ejection opening (20a) of a predetermined diameter is disposed in confrontation with a desired convex of the object to be etched in the form of a wafer (110). The active species gas in the form of an F gas (G) is ejected from the ejection opening (20a) to the convex to thereby flatten it through etching. A distance between the ejection opening and the convex is changed by means of a Z drive mechanism (4) to provide an etching area corresponding to an area of the convex, thus performing effective flattening of the wafer (110). <IMAGE></p> |
申请公布号 |
EP0843336(A2) |
申请公布日期 |
1998.05.20 |
申请号 |
EP19970119624 |
申请日期 |
1997.11.10 |
申请人 |
SPEEDFAM CO., LTD. |
发明人 |
YANAGISAWA, MICHIHKO;IIDA, SHINYA |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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