Struktur und Herstellungsverfahren von Kontakten in CMOS-Schaltungen,申请号DE1992624236T-传众专利搜索

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发明名称	Struktur und Herstellungsverfahren von Kontakten in CMOS-Schaltungen
摘要
申请公布号	DE69224236(T2)	申请公布日期	1998.05.20
申请号	DE1992624236T	申请日期	1992.06.12
申请人	SGS-THOMSON MICROELECTRONICS, INC., CARROLLTON, TEX., US	发明人	CHEN, FUSEN, DALLAS , TEXAS 75287, US;DIXIT, GIRISH, DALLAS , TEXAS 75287, US;BRYANT, FRANK RANDOLPH, DENTON, TEXAS 76201, US
分类号	H01L21/28;H01L21/3205;H01L21/768;(IPC1-7):H01L21/310;H01L21/311	主分类号	H01L21/28
代理机构		代理人
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