MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To fill a contact hole or a groove with wiring material by a high pressure reflow method satisfactorily. SOLUTION: An interlayer insulating film 2, a lower layer Al alloy wiring 3 and an interlayer insulating film 4 are successively formed on a semiconductor substrate 1. After an interlayer insulating film 5 which has a high hydroscopicity and contains much moisture is formed, the interlayer insulating film 5 is etched back to level the difference in level produced by the lower layer Al alloy wiring 3. An interlayer insulating film 6 is formed and contact holes C are drilled in the interlayer insulating films 6 and 4. Then, before a TiN/Ti film is formed, the interlayer insulating films 4, 5 and 6 are degassed by a heat treatment. When the TiN/Ti film 7 is formed, its thickness is to be not less than 80nm. Or, the heat treatment is carried out after the etching back to degas the interlayer insulating film 5 concentratively. Or, protective films are formed on the side walls of the contact holes C or the surfaces of the interlayer insulating films 6 and 4 or the interlayer insulating film 5 are nitrified to prevent the interlayer insulating films 4, 5 and 6 from being degassed.