| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory having a multi-logical value reader circuit easy to modify circuit patterns by providing a reader circuit which process enough by the same operation, irrespective of the read logic value number, without needing the reference potential and sense up, thereby facilitating the design and fabrication and reduce the chip area. SOLUTION: The semiconductor memory comprises memory cells MC having capacitances CS with cell plates CP, bit lines BL having capacitances CB, semiconductor super-lattice 1 which is used as a voltage filter for the output voltages VBL of the bit lines BL, has two or more subband levels up to the continuous band to pattern pulse signals VF, amplifier 4 for amplifying the pulse output signals VF of the super-lattice 1 to position amplified signals VP, counter 5 for counting the signals VP to output read logical values Q and wiring 6 for connecting the super-lattice 1 to the amplifier 4. This eliminates the need of the reference power source, thus providing a simple read circuit and reducing the chip area. |
