| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of an MOS transistor at a deep submicron level to enhance the mass productivity by covering an Si layer, depositing a metal film and annealing to form a silicide layer. SOLUTION: Si layers 7A-1-7A-3 of 30nm are selected on titanium silicide layers 11-1-11-3 at a substrate temp. of 650 deg.C and Si2 H6 gas partial pressure of 1.3×10<-2> Pa. A Ti film is grown to 30nm by the physical vapor deposition and annealed at 650 deg.C to form a silicide film, this film is treated with a mixed liq. of aqueous ammonia with aqueous hydrogen peroxide to remove the Ti film remaining unsilicidized. Titanium silicide layers 9A-1, 9A-2 are laminated on p-type diffused layers 5A-1, 5A-2 to form source-drain regions and a titanium silicide layer 9A-3 is laminated on the tops of an Si gate electrode 4A to form a polyside gate electrode, thereby forming an MOS transistor.
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