发明名称 METHOD OF MANUFACTURING CERAMIC SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress eutectic bond defectives due to gap members using for forming a ceramic substrate for the eutectic bonding of a semiconductor chip by reducing the width of the dividing slits to be formed on a ceramic sheet, more than the grain size of the gap members. SOLUTION: Dividing slits 12 are formed on a ceramic sheet 10 with gap members 11 disposed thereon. The grain size of the gap member is larger than the width of the slit 12. The sheets 10 are laminated through the gap members 11 and sintered at high temps. A green sheet 10 is made of e.g. a clayey alumina or similar ceramic material. The slits 12 of about 10-40μm are cut into the surface of the sheet 10 like checkers and gap members 11 made of alumina having a grain size of about 20-50μm are disposed on the sheet 10 surface, the sheets 10 are laminated and sintered to form ceramics in a high temp. furnace at 1500-1900 deg.C.
申请公布号 JPH10125823(A) 申请公布日期 1998.05.15
申请号 JP19960278382 申请日期 1996.10.21
申请人 SANYO ELECTRIC CO LTD 发明人 YANASE YOSHIHIKO
分类号 H01L23/13;H01L23/12;(IPC1-7):H01L23/13 主分类号 H01L23/13
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