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发明名称
DEPOSITION OF LOW PERMITTIVITY SILICON OXIDE INSULATOR AND SEMICONDUCTOR DEVICE EMPLOYING IT
摘要
申请公布号
JPH10125675(A)
申请公布日期
1998.05.15
申请号
JP19960274633
申请日期
1996.10.17
申请人
SONY CORP
发明人
MUROYAMA MASAKAZU
分类号
H01L21/768;H01L21/316;H01L23/522;(IPC1-7):H01L21/316
主分类号
H01L21/768
代理机构
代理人
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