发明名称 A hybrid IC.
摘要 On a ceramic substrate, spiral-type inductors of a single layer wiring of a metal thin film are provided and respectively connected to a wiring pattern formed on another face of the substrate via through holes. A semiconductor chip is flip-chip mounted on the substrate in a face-down manner. On the face of the semiconductor chip, capacitors composed of a highly dielectric material, resistors formed by an ion implantation method or a thin-film forming method, and FETs are provided, respectively. Interconnection between the substrate and an external circuit board is achieved employing terminals formed at end faces of the substrate. The terminals have a concave shape with respect to the end face of the substrate. Thus, there is no need to use a package, and miniaturization and reduction in cost of a high-performance hybrid IC is achieved. <IMAGE>
申请公布号 EP0683519(A3) 申请公布日期 1998.05.13
申请号 EP19950106787 申请日期 1995.05.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKATSUKA, TADAYOSHI;ITOH, JUNJI;YAMAMOTO, SHINJI;NISHITSUJI, MITSURU
分类号 H01L23/64;H01L25/16;H03F3/195;H05K1/16;H05K3/40 主分类号 H01L23/64
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