发明名称 |
Electronic device with reduced alpha particles soft error rate |
摘要 |
<p>Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission. <IMAGE></p> |
申请公布号 |
EP0612106(B1) |
申请公布日期 |
1998.05.13 |
申请号 |
EP19940102329 |
申请日期 |
1994.02.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAUMANN, ROBERT C.;HOSSAIN TIMOTHY Z. |
分类号 |
H01L21/316;H01L21/8242;H01L23/29;H01L23/31;H01L23/556;H01L27/10;H01L27/108;H01L27/148;(IPC1-7):H01L23/556 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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