发明名称 |
Manufacture device of four transistor sram cell layout and device |
摘要 |
In accordance with still another aspect of this invention, a set of cross-coupled inverters provide a bistable flip flop formed on a semiconductor substrate with a pair of FOX regions defining an area on the surface of a substrate. The substrate is composed of a semiconductor material with a pair of buried contact regions in the silicon substrate juxtaposed with the FOX regions. A control gate electrode is formed on a gate oxide layer on the surface of the substrate between the pair of the FOX regions. A source region and drain region are formed in the substrate juxtaposed with the control gate electrode to form a parasitic FET device between the FOX regions, the source region and the drain region and reaching to separate ones of the buried contact regions. An interpolysilicon dielectric layer over the control gate electrode covers the device and the power supply conductor passes over the control gate electrode.
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申请公布号 |
US5751044(A) |
申请公布日期 |
1998.05.12 |
申请号 |
US19970899737 |
申请日期 |
1997.07.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
LEE, JIN-YUAN |
分类号 |
G11C11/412;H01L21/8244;(IPC1-7):H01L21/824 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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