| 摘要 |
A semiconductor laser includes an n type semiconductor substrate, an n type cladding layer, an active layer having an effective band gap energy, a p type cladding layer, and a tunnel diode structure including a high dopant concentration p type semiconductor layer and a high dopant concentration n type semiconductor layer having an effective band gap energy larger than the effective band gap energy of the active layer, a p side electrode disposed on the tunnel diode structure, and an n side electrode disposed on the rear surface of the n type semiconductor substrate. Since this semiconductor laser includes the tunnel diode structure disposed in the reverse bias direction with respect to the current flow direction, the contact resistivity of the ohmic contact of the p side electrode is lowered as compared to the case where the p side electrode is disposed on a p type semiconductor layer. The effective contact resistivity of the p side electrode is reduced. As a result, a semiconductor laser including a p side electrode having a low contact resistivity ohmic contact is realized.
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