发明名称 Semiconductor memory device with reduced output noise
摘要 An inhibition signal CAIHT for inhibiting, in adaptation to the data output timing of an output buffer, an internal column address strobe signal int/CAS output from a CAS buffer from falling from an H level to an L level for a prescribed period is generated and then applied to the CAS buffer. During data output, the internal column address strobe signal int/CAS is inhibited from being brought into an active state for the prescribed period, so that new data can be prevented from being transferred to the output buffer during this inhibition period, whereby erroneous data resulting from output noise can be prevented from being output. Consequently, a semiconductor memory device capable of correctly outputting data without the influence of the output noise is provided.
申请公布号 US5751645(A) 申请公布日期 1998.05.12
申请号 US19970781795 申请日期 1997.01.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TSUKIKAWA, YASUHIKO
分类号 G11C11/409;G11C7/10;G11C7/22;G11C8/18;G11C11/401;G11C11/407;(IPC1-7):G11C7/00 主分类号 G11C11/409
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