Overvoltage protective circuit for mos components

摘要

The invention relates to an input protective circuit for MOS components which contains a resistor R, a thin oxide transistor DOX and a punch-through component. The use of the punch-through component instead of a field oxide transistor in the protective circuit reduces the breadkown rate of integrated circuits through ESD discharges. The problem of the delayed response of a protective circuit and the concomitant interference through voltage damage are thus minimized. The advantage of the protective circuit of the invention over prior art types lies in that it becomes active immediately on reaching the punch-through voltage and thus responds immediately.