发明名称 Semiconductor memory e.g. high speed DRAM with data memory array
摘要 The memory comprises a data array (1) and a data bus (2, 3, 6) incorporated between data input and output fields (7) and the array for the input and output of data stored in an external component and in data to be stored. The data bus exchanges at least in data with the memory array and also exchanges at least in data with the data input and output field by time allocation during the same time interval. There are numerous memory cells in the array and the input and output field handles in data. There are two buffers (4, 5) with a data input and output bus (6) in between.
申请公布号 DE19734719(A1) 申请公布日期 1998.05.07
申请号 DE19971034719 申请日期 1997.08.11
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 JOO, YANG SUNG, SEOL, KR
分类号 G11C11/401;G11C7/10;(IPC1-7):G11C7/00 主分类号 G11C11/401
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