发明名称 |
Method of forming an amorphous semiconductor film |
摘要 |
A method for forming an amorphous semiconductor film which comprises (a) a film-forming step of forming a semiconductor film having not more that 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 ANGSTROM , and (b) a modifying step of modifying the formed film, the steps being repeated multiple times. The modifying step may involve exposure to discharge atmosphere contained a non-film-forming reactive gas, or to a monovalent ion, or to atomic hydrogen to improve the properties of the semiconductor film. For a halogenated silicon film, modification may involve dehalogenation-hydrogenation. |
申请公布号 |
EP0407088(B1) |
申请公布日期 |
1998.05.06 |
申请号 |
EP19900307023 |
申请日期 |
1990.06.27 |
申请人 |
MITSUI CHEMICALS, INC. |
发明人 |
MIYACHI, KENJI;FUKUDA, NOBUHIRO;ASHIDA, YOSHINORI;KOYAMA, MASATO |
分类号 |
C23C14/06;C23C14/14;C23C14/58;C23C16/56;H01L21/203;H01L21/205;H01L21/30;H01L31/20 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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