| 摘要 |
PROBLEM TO BE SOLVED: To realize a nitride semiconductor device, using a nitride semiconductor as its substrate by making an n-type nitride semiconductor layer with a specific film thickness to grow on a substrate, and by making nitride semiconductor layers containing acceptor impurities grow on the foregoing nitride semiconductor layer, and further, by removing thereafter the substrate therefrom. SOLUTION: A buffer layer 11 is made to grow in contact with a substrate 10 made of spinel (MgAl2 O4 ). Then, an n-type nitride compound semiconductor layer 1 with a film thickness not smaller than 20μm is made to grow in contact with the buffer layer 11. Further, an active layer 2 is made to grow in contact with the semiconductor layer 1. Subsequently, nitride semiconductor layers 3, 4 containing acceptor impurities are made to grow on the active layer 2. Then, a resultant wafer is taken out from a reaction container, to remove the substrate 10 therefrom. In this case, the buffer layer 11 is also removed naturally therefrom. Further, an n-electrode 20 is provided on the surface of the semiconductor layer 1 corresponding to the bottom surface of the wafer, and an electrode comprising a translucent p-type electrode 21 and a pad electrode 22 is formed on the uppermost semiconductor layer 4. |
