| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for selectively depositing CVD(chemical vapor deposition) copper on a conductive surface coexisting with a non-conductive surface, and an adhesive conductor interface. SOLUTION: Both a conductive surface and a non-conductive surface are prepared by low-energy ion etching with an inert gas. Etching promotes deposition of copper on the conductive surface. After etching, CVD copper is deposited, and then the surfaces are etched again to remove residual copper from the non-conductive surface. Thus, the surface for further deposition of copper is prepared again. By repetitive cycles of etching and deposition of copper, copper is accumulated on the conductive surface to a desired thickness, while no copper exists on the non-conductive surface. |
