| 摘要 |
PROBLEM TO BE SOLVED: To improve sensitivity, namely an electric resistance variation rate of a spin valve type magnetoresistive effect multilayer film by setting a dispersion degree of surface interval at the interface between a second ferromagnetic layer and antiferromagnetic layer to the value to be less than the particular value. SOLUTION: A first ferromagnetic layer 2 is formed as an alloy film which is mainly formed of a NiFe film, formed on a ground layer 1 and Co film stacked thereon or Co having the equal density. Moreover, a second ferromagnetic layer 4 is formed as a an alloy film, which is mainly formed of Co film provided opposed to the Co of the first ferromagnetic layer 2 or Co, having equal density. Moreover, a film containing mainly NiFe is also formed. An anti-ferromagnetic layer 5 is provided on this second ferromagnetic layer 4. When the almost parallel lattice surface intervals on the film surfaces of the second ferromagnetic layer 4 and anti-ferromagnetic layer 5 are defined as dferro , danti-ferro , a dispersion degreeσis set to the range ofσ<=0.5Å, while the lattice surface interval of interface at the two layers 4, 5 is equal to the average value 1/2 (dferro +danti-ferro ).
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