发明名称 |
Method for fabricating a semiconductor device using lateral gettering |
摘要 |
<p>A semiconductor structure (20) includes a silicon layer (16) formed on an oxide layer (14). Gettering sinks (31, 32) are formed in the silicon layer (16). Lateral gettering is performed to effectively remove impurities from a first section (26) of the semiconductor layer (16). An insulated gate semiconductor device (40) is then formed in semiconductor layer (16), wherein a channel region (55) of the device (40) is formed in the first section (26) of the semiconductor layer (16). A gate dielectric layer (42) of the device (40) is formed over a portion of the first section (26) after the lateral gettering process, thereby enhancing the integrity of the gate dielectric layer (42). <IMAGE></p> |
申请公布号 |
EP0840367(A2) |
申请公布日期 |
1998.05.06 |
申请号 |
EP19970117873 |
申请日期 |
1997.10.15 |
申请人 |
MOTOROLA, INC. |
发明人 |
HONG, STELLA Q.;WETTEROTH, THOMAS A.;WILSON, SYD ROBERT |
分类号 |
H01L29/786;H01L21/322;H01L21/336;H01L29/49;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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