| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser allowing switching of an oscillation condition. SOLUTION: When a semiconductor laser with an active layer 3 generates resonance, due to distribution reflection of a diffraction lattice 5, this laser has electroded 7, 8 injecting currents into the active layer 3. Again to be generated by the active layer 3 has a constitution where TE-polarized wave are equalized with TM-polarized waves. Further, apart from the electrodes injecting currents to the active layer 3, electrodes 8, 9 changing a refractive index of at least one semiconductor layer 10 of two semiconductor layers 4, 10 in which the refractive lattice 5 is formed on its interface. |
