Method for forming multilayered wiring in a semiconductor device

摘要

The method can remove a material layer produced in the step of etching back an organic SOG layer (150) or forming a via hole, by irradiating ultraviolet rays to the surface of the substrate or exposing the substrate under an O 2 or O 3 plasma atmosphere after etching back the organic SOG layer (150) or forming the via hole. Thus, deterioration of electrical characteristics of a semiconductor device, which is caused by electrical contact failures between upper and lower conductive layer patterns or flaking of an interlayer dielectric layer pattern (140), can be prevented.