发明名称 |
Level shift circuit |
摘要 |
<p>A level shift circuit consisting MOSFETs is provided which comprises at least two bias voltage supply circuits (B1' B2) and a driver circuit (D) cascaded between input and output terminals (V1' V2) of the level shift circuit. The first stage of the bias voltage supply circuits receives an input voltage and the last stage thereof supplies a level-shifted voltage to the driver circuit. The driver circuit includes N- and P-channel transistors (7, 8, 9). Gates of the transistors of the driver circuit receive the level-shifted voltage from the bias voltage supply circuits and the input voltage, respectively. Sources of the transistors of the driver circuit are commonly connected to the output terminal to provide an output voltage.</p> |
申请公布号 |
EP0840454(A2) |
申请公布日期 |
1998.05.06 |
申请号 |
EP19970308650 |
申请日期 |
1997.10.29 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD. |
发明人 |
MATSUMOTO, TOSHIYUKI;HIROTA, YOSHIHIRO |
分类号 |
H03K19/0185;(IPC1-7):H03K19/018;H03K19/00 |
主分类号 |
H03K19/0185 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|