发明名称 Level shift circuit
摘要 <p>A level shift circuit consisting MOSFETs is provided which comprises at least two bias voltage supply circuits (B1' B2) and a driver circuit (D) cascaded between input and output terminals (V1' V2) of the level shift circuit. The first stage of the bias voltage supply circuits receives an input voltage and the last stage thereof supplies a level-shifted voltage to the driver circuit. The driver circuit includes N- and P-channel transistors (7, 8, 9). Gates of the transistors of the driver circuit receive the level-shifted voltage from the bias voltage supply circuits and the input voltage, respectively. Sources of the transistors of the driver circuit are commonly connected to the output terminal to provide an output voltage.</p>
申请公布号 EP0840454(A2) 申请公布日期 1998.05.06
申请号 EP19970308650 申请日期 1997.10.29
申请人 SUMITOMO METAL INDUSTRIES, LTD. 发明人 MATSUMOTO, TOSHIYUKI;HIROTA, YOSHIHIRO
分类号 H03K19/0185;(IPC1-7):H03K19/018;H03K19/00 主分类号 H03K19/0185
代理机构 代理人
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