| 摘要 |
The solid state image sensor disclosed includes a photoelectric conversion section, a vertical charge transfer section, a horizontal charge transfer section and an output section. The horizontal charge transfer section has an electric field reinforcing region in which a depletion layer is extended in a depth direction thereby reinforcing a fringe electric field. The vertical charge transfer section and the horizontal charge transfer section are disposed in a first semiconductor layer and a second semiconductor layer which are joined together, and the electric field reinforcing region is provided in a region in which the second semiconductor layer is not present. Thus, the transfer efficiency of the signal charge in the horizontal charge transfer section is enhanced.
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