| 发明名称 |
Fast power diode |
| 摘要 |
A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incorporation of the parameters necessary for operation, the diode is irradiated with electrons.
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| 申请公布号 |
US5747872(A) |
申请公布日期 |
1998.05.05 |
| 申请号 |
US19950492731 |
申请日期 |
1995.06.20 |
| 申请人 |
SEMIKRON ELEKTRONIC GMBH |
发明人 |
LUTZ, JOSEF;KINNE, MARIANNE;MUELLER, HEINZ-JUERGEN |
| 分类号 |
H01L21/22;H01L21/263;H01L21/329;H01L29/167;H01L29/32;H01L29/861;(IPC1-7):H01L29/167;H01L29/207;H01L29/227;H01L31/028 |
主分类号 |
H01L21/22 |
| 代理机构 |
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