发明名称 |
Internal supply voltage generating circuit for semiconductor memory device |
摘要 |
Internal supply voltage generating circuits generate internal supply voltages at voltage levels below an external supply voltage. The internal supply voltages operate peripheral circuits and array circuits. A reference voltage generates a constant reference voltage. First and second dividing circuits output a given voltage in response to the internal supply voltage. First and second differential amplifiers compare the reference voltage with each of the output voltages from the first and second dividing circuits. First and second driving circuits supply the internal supply voltage from the external supply voltage. First and second voltage boosting circuits clamp output voltage levels for the first and second driving circuits from the external supply voltage and raise the clamped output voltage level of the first driving circuit higher than the clamped output voltage level of the second driving circuit. The boosting circuits maintain a voltage offset between the first and second internal voltage supplies when the external supply voltage is increased above a normal operating range.
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申请公布号 |
US5747974(A) |
申请公布日期 |
1998.05.05 |
申请号 |
US19960664952 |
申请日期 |
1996.06.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, JUN-YOUNG |
分类号 |
G11C11/407;G05F1/46;G11C11/401;(IPC1-7):G05F1/59 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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