| 发明名称 |
SEMICONDUCTIVE PHOTOTRANSMISSION PASS AND SEMICONDUCTOR EMISSION DEVIC E USED IT |
| 摘要 |
<p>PURPOSE:To fabricate photo emission device of single mode by forming semiconductive layer having smaller refractive index for blocking the first and the second light on the counter plane of the phototransmission and semiconductor layer and by transmitting light of specified mode in the region of specified width as effective phototransmission path.</p> |
| 申请公布号 |
JPS5245296(A) |
申请公布日期 |
1977.04.09 |
| 申请号 |
JP19750121162 |
申请日期 |
1975.10.07 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
KAWAGUCHI HITOSHI;FURUKAWA YOSHITAKA |
| 分类号 |
G02B6/12;G02F1/015;H01L31/02;H01L33/30;H01L33/38;H01S5/00;H01S5/042;H01S5/22 |
主分类号 |
G02B6/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
