发明名称 SEMICONDUCTOR MEMORY DEVICE WITH ERROR SELF-CORRECTION FUNCTION
摘要 A semiconductor memory device has a built-in error correction system for correcting undesirably inverted data bits, and the built-in error correction system starts a parity bit generating sequence and an error correcting sequence only when increase of error rate is forecasted, thereby increasing the access speed without sacrifice of the reliability.
申请公布号 KR0136448(B1) 申请公布日期 1998.04.29
申请号 KR19940019161 申请日期 1994.08.03
申请人 NEC CORP. 发明人 ANDO, MANABU;MONDEN, JUNJI
分类号 G11C11/413;G06F11/00;G06F11/10;G11C11/401;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C11/413
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