发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH ERROR SELF-CORRECTION FUNCTION |
摘要 |
A semiconductor memory device has a built-in error correction system for correcting undesirably inverted data bits, and the built-in error correction system starts a parity bit generating sequence and an error correcting sequence only when increase of error rate is forecasted, thereby increasing the access speed without sacrifice of the reliability. |
申请公布号 |
KR0136448(B1) |
申请公布日期 |
1998.04.29 |
申请号 |
KR19940019161 |
申请日期 |
1994.08.03 |
申请人 |
NEC CORP. |
发明人 |
ANDO, MANABU;MONDEN, JUNJI |
分类号 |
G11C11/413;G06F11/00;G06F11/10;G11C11/401;G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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