A1GaInP light emitting diode

摘要

An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (AlxGa1-x)yIn1-yP on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.