| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable Ohmic contact between a semiconductor layer and n-electrode by providing the layer made of a n-type GaN compd. semiconductor and electrodes contg. at least one selected out of metals V, Nb, Zr and Cr on the semiconductor layer. SOLUTION: On a substrate 1, an n-type GaN semiconductor layer 2 is formed, a p-type semiconductor layer 3 is formed thereon. Both layers 3, 2 are partly removed to form a surface 4 for forming n-electrodes. A photo resist 5 is patterned on the p-layer 3 and surface 4 to form windows 6 in n-electrode forming regions. Materials are vapor-deposited on the resist 5 and entire surfaces of the windows 6 to form a bass layer 7 and main electrode layer 8. The base layer forming material is preferable one metal selected from Nb, Cr, Zr and V or alloy thereof. These are heate-treated finally. |
