| 摘要 |
PURPOSE:To prevent deviated exposing by charge up in the stage of exposing by coating a surface active agent on a resist film and exposing the same by electric charge particle beams. CONSTITUTION:The resist film 2 consisting of a PMMA (polymethacrylate) is first coated on a semiconductor substrate 1 and is prebaked. The surface active agent 5 consisting of a liquid alkoxyl alkylol amine is then coated therein and is subjected to baking (heat treatment). The desired region D0 of the resist film is then exposed with electron beams EB. The substrate is immersed in a developing soln. consisting of a methyl isobutyl ketone (MiBK) and is developed. The surface active agent 5 over the entire surface is simultaneously removed in this stage. The surface active agent 5 escapes the charge in the stage of the electron beam exposing if the resist film is processed in the above- mentioned manner and therefore, the charge up is obviated and the deviation by the charge-up is eliminated. The exposing with high accuracy is thus executed. |
