| 摘要 |
<p>PROBLEM TO BE SOLVED: To protect a pattern layer on an element region and improve reliability by preventing an insulation region from peeling in an element region due to impact of a cutting blade by forming a discontinuous insulation layer region on a cutting region so that an insulation layer on an element region and an insulation layer on a cutting region are discontinuous mutually. SOLUTION: After various pattern layers are formed on a semiconductor wafer 22, a TEG pattern 30 is formed in a part on an insulation layer 32 formed during oxidation process of silicon forming a field oxide film 24. A part of an insulation layer 23 is removed by using an etching method which is adopted in a photolithography process and discontinuous insulation layer regions 34a, 34b are formed. A wafer 22 in which the discontinuous insulation layer regions 34a, 34b are formed is cut along a cutting line by using a cutting blade. Since the insulation layer 32 of the cutting region 23 does not attain the element region 25, a pattern layer of the element region 25 is not affected by peeling of the insulation layer 32 caused by impact of a cutting blade.</p> |
