Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means

摘要

In an aparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided: a processing chamber capable of keeping a vacuum condition therein; a substrate holder mounted within said processing chamber, for holding a substrate and performing a temperature adjustment; a first temperature adjusting mechanism for performing the temperature adjustment of said substrate via said substrate holder; a gas conducting mechanism for conducting a predetermined gas into said processing chamber; an exhausting mechanism for exhausting an interior of said processing chamber; a distributing plate provided within said processing chamber, for uniformly supplying said predetermined gas to a surface of said substrate; whereby a part of element consisting said predetermined gas is deposited on the surface of said substrate; and a second temperature adjusting mechanism for adjusting the temperature of said distributing plate.