| 摘要 |
PROBLEM TO BE SOLVED: To raise sensitivity of a sensor and flatten its structure, relating to a thermal infrared ray sensor of micro-bridge structure. SOLUTION: Relating to a thermal infrared ray sensor 10 of a bridge structure where an infrared ray detecting part 10A is supported on a semiconductor substrate 1, an aluminum film (reflection film) is formed below a platinum silicide film 16 (infrared ray absorbing film) through a polycrystal silicon film 14 of a specified film thickness, with the infrared ray absorbing film separated from the reflection film with a specified interval (d). The specified interval (d) is decided according to the following equation: d=(2N-1)×λ/(4n) (n is refraction factor of film formed between infrared ray absorbing film and reflection film,λis infrared ray wavelength to be detected, N is positive integer).
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